5 results
High-density bimodal bentonite blends for hydraulic sealings at the Ibbenbüren coalmine
- Felicitas Wolters, Wiebke Baille, Katja Emmerich, Eva Schmidt, Christian Wolters, Franz Königer, Jürgen Kunz, Volker Krase, Matthias Schellhorn
-
- Journal:
- Clay Minerals / Volume 50 / Issue 3 / August 2015
- Published online by Cambridge University Press:
- 02 January 2018, pp. 391-403
-
- Article
-
- You have access Access
- Open access
- Export citation
-
The two high-pressure water-retaining dams at the Ibbenbüren coalmine in Münsterland (Germany) have to perform reliably under the induced tension caused by further exploitation of the current mining area. The load-bearing and the sealing functions of the new barriers were separated and new sealing materials were developed. An innovative multilayer sealing system of bentonite and sandwiched equipotential layers (SANDWICH) supporting homogeneous swelling and sealing, independent of formation water (Nüesch et al., 2002), was applied in this project. A testing program of strain-controlled swelling pressure tests on compacted bentonite specimens and on a bentonite/sand mixture was conducted to ensure an adequate potential for swelling-pressure development.
The measurements under constant volume for dry densities between 1.45 g/cm3 and 1.67 g/cm3 showed an evolving swelling pressure between 1.04 and 1.8 MPa for 100% bentonite samples. Straincontrolled oedometer tests for zero strain and step-wise applied strain up to 2% revealed that a sufficient magnitude of swelling pressure existed at maximum applied strain.
Contributors
-
- By Mitchell Aboulafia, Frederick Adams, Marilyn McCord Adams, Robert M. Adams, Laird Addis, James W. Allard, David Allison, William P. Alston, Karl Ameriks, C. Anthony Anderson, David Leech Anderson, Lanier Anderson, Roger Ariew, David Armstrong, Denis G. Arnold, E. J. Ashworth, Margaret Atherton, Robin Attfield, Bruce Aune, Edward Wilson Averill, Jody Azzouni, Kent Bach, Andrew Bailey, Lynne Rudder Baker, Thomas R. Baldwin, Jon Barwise, George Bealer, William Bechtel, Lawrence C. Becker, Mark A. Bedau, Ernst Behler, José A. Benardete, Ermanno Bencivenga, Jan Berg, Michael Bergmann, Robert L. Bernasconi, Sven Bernecker, Bernard Berofsky, Rod Bertolet, Charles J. Beyer, Christian Beyer, Joseph Bien, Joseph Bien, Peg Birmingham, Ivan Boh, James Bohman, Daniel Bonevac, Laurence BonJour, William J. Bouwsma, Raymond D. Bradley, Myles Brand, Richard B. Brandt, Michael E. Bratman, Stephen E. Braude, Daniel Breazeale, Angela Breitenbach, Jason Bridges, David O. Brink, Gordon G. Brittan, Justin Broackes, Dan W. Brock, Aaron Bronfman, Jeffrey E. Brower, Bartosz Brozek, Anthony Brueckner, Jeffrey Bub, Lara Buchak, Otavio Bueno, Ann E. Bumpus, Robert W. Burch, John Burgess, Arthur W. Burks, Panayot Butchvarov, Robert E. Butts, Marina Bykova, Patrick Byrne, David Carr, Noël Carroll, Edward S. Casey, Victor Caston, Victor Caston, Albert Casullo, Robert L. Causey, Alan K. L. Chan, Ruth Chang, Deen K. Chatterjee, Andrew Chignell, Roderick M. Chisholm, Kelly J. Clark, E. J. Coffman, Robin Collins, Brian P. Copenhaver, John Corcoran, John Cottingham, Roger Crisp, Frederick J. Crosson, Antonio S. Cua, Phillip D. Cummins, Martin Curd, Adam Cureton, Andrew Cutrofello, Stephen Darwall, Paul Sheldon Davies, Wayne A. Davis, Timothy Joseph Day, Claudio de Almeida, Mario De Caro, Mario De Caro, John Deigh, C. F. Delaney, Daniel C. Dennett, Michael R. DePaul, Michael Detlefsen, Daniel Trent Devereux, Philip E. Devine, John M. Dillon, Martin C. Dillon, Robert DiSalle, Mary Domski, Alan Donagan, Paul Draper, Fred Dretske, Mircea Dumitru, Wilhelm Dupré, Gerald Dworkin, John Earman, Ellery Eells, Catherine Z. Elgin, Berent Enç, Ronald P. Endicott, Edward Erwin, John Etchemendy, C. Stephen Evans, Susan L. Feagin, Solomon Feferman, Richard Feldman, Arthur Fine, Maurice A. Finocchiaro, William FitzPatrick, Richard E. Flathman, Gvozden Flego, Richard Foley, Graeme Forbes, Rainer Forst, Malcolm R. Forster, Daniel Fouke, Patrick Francken, Samuel Freeman, Elizabeth Fricker, Miranda Fricker, Michael Friedman, Michael Fuerstein, Richard A. Fumerton, Alan Gabbey, Pieranna Garavaso, Daniel Garber, Jorge L. A. Garcia, Robert K. Garcia, Don Garrett, Philip Gasper, Gerald Gaus, Berys Gaut, Bernard Gert, Roger F. Gibson, Cody Gilmore, Carl Ginet, Alan H. Goldman, Alvin I. Goldman, Alfonso Gömez-Lobo, Lenn E. Goodman, Robert M. Gordon, Stefan Gosepath, Jorge J. E. Gracia, Daniel W. Graham, George A. Graham, Peter J. Graham, Richard E. Grandy, I. Grattan-Guinness, John Greco, Philip T. Grier, Nicholas Griffin, Nicholas Griffin, David A. Griffiths, Paul J. Griffiths, Stephen R. Grimm, Charles L. Griswold, Charles B. Guignon, Pete A. Y. Gunter, Dimitri Gutas, Gary Gutting, Paul Guyer, Kwame Gyekye, Oscar A. Haac, Raul Hakli, Raul Hakli, Michael Hallett, Edward C. Halper, Jean Hampton, R. James Hankinson, K. R. Hanley, Russell Hardin, Robert M. Harnish, William Harper, David Harrah, Kevin Hart, Ali Hasan, William Hasker, John Haugeland, Roger Hausheer, William Heald, Peter Heath, Richard Heck, John F. Heil, Vincent F. Hendricks, Stephen Hetherington, Francis Heylighen, Kathleen Marie Higgins, Risto Hilpinen, Harold T. Hodes, Joshua Hoffman, Alan Holland, Robert L. Holmes, Richard Holton, Brad W. Hooker, Terence E. Horgan, Tamara Horowitz, Paul Horwich, Vittorio Hösle, Paul Hoβfeld, Daniel Howard-Snyder, Frances Howard-Snyder, Anne Hudson, Deal W. Hudson, Carl A. Huffman, David L. Hull, Patricia Huntington, Thomas Hurka, Paul Hurley, Rosalind Hursthouse, Guillermo Hurtado, Ronald E. Hustwit, Sarah Hutton, Jonathan Jenkins Ichikawa, Harry A. Ide, David Ingram, Philip J. Ivanhoe, Alfred L. Ivry, Frank Jackson, Dale Jacquette, Joseph Jedwab, Richard Jeffrey, David Alan Johnson, Edward Johnson, Mark D. Jordan, Richard Joyce, Hwa Yol Jung, Robert Hillary Kane, Tomis Kapitan, Jacquelyn Ann K. Kegley, James A. Keller, Ralph Kennedy, Sergei Khoruzhii, Jaegwon Kim, Yersu Kim, Nathan L. King, Patricia Kitcher, Peter D. Klein, E. D. Klemke, Virginia Klenk, George L. Kline, Christian Klotz, Simo Knuuttila, Joseph J. Kockelmans, Konstantin Kolenda, Sebastian Tomasz Kołodziejczyk, Isaac Kramnick, Richard Kraut, Fred Kroon, Manfred Kuehn, Steven T. Kuhn, Henry E. Kyburg, John Lachs, Jennifer Lackey, Stephen E. Lahey, Andrea Lavazza, Thomas H. Leahey, Joo Heung Lee, Keith Lehrer, Dorothy Leland, Noah M. Lemos, Ernest LePore, Sarah-Jane Leslie, Isaac Levi, Andrew Levine, Alan E. Lewis, Daniel E. Little, Shu-hsien Liu, Shu-hsien Liu, Alan K. L. Chan, Brian Loar, Lawrence B. Lombard, John Longeway, Dominic McIver Lopes, Michael J. Loux, E. J. Lowe, Steven Luper, Eugene C. Luschei, William G. Lycan, David Lyons, David Macarthur, Danielle Macbeth, Scott MacDonald, Jacob L. Mackey, Louis H. Mackey, Penelope Mackie, Edward H. Madden, Penelope Maddy, G. B. Madison, Bernd Magnus, Pekka Mäkelä, Rudolf A. Makkreel, David Manley, William E. Mann (W.E.M.), Vladimir Marchenkov, Peter Markie, Jean-Pierre Marquis, Ausonio Marras, Mike W. Martin, A. P. Martinich, William L. McBride, David McCabe, Storrs McCall, Hugh J. McCann, Robert N. McCauley, John J. McDermott, Sarah McGrath, Ralph McInerny, Daniel J. McKaughan, Thomas McKay, Michael McKinsey, Brian P. McLaughlin, Ernan McMullin, Anthonie Meijers, Jack W. Meiland, William Jason Melanson, Alfred R. Mele, Joseph R. Mendola, Christopher Menzel, Michael J. Meyer, Christian B. Miller, David W. Miller, Peter Millican, Robert N. Minor, Phillip Mitsis, James A. Montmarquet, Michael S. Moore, Tim Moore, Benjamin Morison, Donald R. Morrison, Stephen J. Morse, Paul K. Moser, Alexander P. D. Mourelatos, Ian Mueller, James Bernard Murphy, Mark C. Murphy, Steven Nadler, Jan Narveson, Alan Nelson, Jerome Neu, Samuel Newlands, Kai Nielsen, Ilkka Niiniluoto, Carlos G. Noreña, Calvin G. Normore, David Fate Norton, Nikolaj Nottelmann, Donald Nute, David S. Oderberg, Steve Odin, Michael O’Rourke, Willard G. Oxtoby, Heinz Paetzold, George S. Pappas, Anthony J. Parel, Lydia Patton, R. P. Peerenboom, Francis Jeffry Pelletier, Adriaan T. Peperzak, Derk Pereboom, Jaroslav Peregrin, Glen Pettigrove, Philip Pettit, Edmund L. Pincoffs, Andrew Pinsent, Robert B. Pippin, Alvin Plantinga, Louis P. Pojman, Richard H. Popkin, John F. Post, Carl J. Posy, William J. Prior, Richard Purtill, Michael Quante, Philip L. Quinn, Philip L. Quinn, Elizabeth S. Radcliffe, Diana Raffman, Gerard Raulet, Stephen L. Read, Andrews Reath, Andrew Reisner, Nicholas Rescher, Henry S. Richardson, Robert C. Richardson, Thomas Ricketts, Wayne D. Riggs, Mark Roberts, Robert C. Roberts, Luke Robinson, Alexander Rosenberg, Gary Rosenkranz, Bernice Glatzer Rosenthal, Adina L. Roskies, William L. Rowe, T. M. Rudavsky, Michael Ruse, Bruce Russell, Lilly-Marlene Russow, Dan Ryder, R. M. Sainsbury, Joseph Salerno, Nathan Salmon, Wesley C. Salmon, Constantine Sandis, David H. Sanford, Marco Santambrogio, David Sapire, Ruth A. Saunders, Geoffrey Sayre-McCord, Charles Sayward, James P. Scanlan, Richard Schacht, Tamar Schapiro, Frederick F. Schmitt, Jerome B. Schneewind, Calvin O. Schrag, Alan D. Schrift, George F. Schumm, Jean-Loup Seban, David N. Sedley, Kenneth Seeskin, Krister Segerberg, Charlene Haddock Seigfried, Dennis M. Senchuk, James F. Sennett, William Lad Sessions, Stewart Shapiro, Tommie Shelby, Donald W. Sherburne, Christopher Shields, Roger A. Shiner, Sydney Shoemaker, Robert K. Shope, Kwong-loi Shun, Wilfried Sieg, A. John Simmons, Robert L. Simon, Marcus G. Singer, Georgette Sinkler, Walter Sinnott-Armstrong, Matti T. Sintonen, Lawrence Sklar, Brian Skyrms, Robert C. Sleigh, Michael Anthony Slote, Hans Sluga, Barry Smith, Michael Smith, Robin Smith, Robert Sokolowski, Robert C. Solomon, Marta Soniewicka, Philip Soper, Ernest Sosa, Nicholas Southwood, Paul Vincent Spade, T. L. S. Sprigge, Eric O. Springsted, George J. Stack, Rebecca Stangl, Jason Stanley, Florian Steinberger, Sören Stenlund, Christopher Stephens, James P. Sterba, Josef Stern, Matthias Steup, M. A. Stewart, Leopold Stubenberg, Edith Dudley Sulla, Frederick Suppe, Jere Paul Surber, David George Sussman, Sigrún Svavarsdóttir, Zeno G. Swijtink, Richard Swinburne, Charles C. Taliaferro, Robert B. Talisse, John Tasioulas, Paul Teller, Larry S. Temkin, Mark Textor, H. S. Thayer, Peter Thielke, Alan Thomas, Amie L. Thomasson, Katherine Thomson-Jones, Joshua C. Thurow, Vzalerie Tiberius, Terrence N. Tice, Paul Tidman, Mark C. Timmons, William Tolhurst, James E. Tomberlin, Rosemarie Tong, Lawrence Torcello, Kelly Trogdon, J. D. Trout, Robert E. Tully, Raimo Tuomela, John Turri, Martin M. Tweedale, Thomas Uebel, Jennifer Uleman, James Van Cleve, Harry van der Linden, Peter van Inwagen, Bryan W. Van Norden, René van Woudenberg, Donald Phillip Verene, Samantha Vice, Thomas Vinci, Donald Wayne Viney, Barbara Von Eckardt, Peter B. M. Vranas, Steven J. Wagner, William J. Wainwright, Paul E. Walker, Robert E. Wall, Craig Walton, Douglas Walton, Eric Watkins, Richard A. Watson, Michael V. Wedin, Rudolph H. Weingartner, Paul Weirich, Paul J. Weithman, Carl Wellman, Howard Wettstein, Samuel C. Wheeler, Stephen A. White, Jennifer Whiting, Edward R. Wierenga, Michael Williams, Fred Wilson, W. Kent Wilson, Kenneth P. Winkler, John F. Wippel, Jan Woleński, Allan B. Wolter, Nicholas P. Wolterstorff, Rega Wood, W. Jay Wood, Paul Woodruff, Alison Wylie, Gideon Yaffe, Takashi Yagisawa, Yutaka Yamamoto, Keith E. Yandell, Xiaomei Yang, Dean Zimmerman, Günter Zoller, Catherine Zuckert, Michael Zuckert, Jack A. Zupko (J.A.Z.)
- Edited by Robert Audi, University of Notre Dame, Indiana
-
- Book:
- The Cambridge Dictionary of Philosophy
- Published online:
- 05 August 2015
- Print publication:
- 27 April 2015, pp ix-xxx
-
- Chapter
- Export citation
X-ray diffraction study of HgBa2CuO4+δ at high pressures
- Eduardo J. Gonzalez, Winnie Wong-Ng, Gasper J. Piermarini, Christian Wolters, Justin Schwartz
-
- Journal:
- Powder Diffraction / Volume 12 / Issue 2 / June 1997
- Published online by Cambridge University Press:
- 10 January 2013, pp. 106-112
-
- Article
- Export citation
-
An in situ high pressure study using energy dispersive X-ray diffraction has been carried out on the polycrystalline high-Tc superconductor, HgBa2CuO4+δ (Hg-1201), to study its phase stability under pressure and also to measure its compressibility and bulk modulus. No evidence of pressure-induced polymorphism was found in the pressure range investigated, i.e., from 0.1 MPa (1 atm) to 5 GPa. The compound exhibited anisotropic elastic properties. The axial compressibility along the c axis was measured to be (3.96±0.35)×10−3GPa−1 and along the a axis (3.42±0.13)×10−3GPa−1, corresponding to an anisotropy ratio of 1.16±0.11. The bulk modulus was determined to be (94.7±4.2) GPa and, assuming a Poisson's ratio of 0.2, Young's modulus was estimated to be (170±8) GPa.
Through Wafer Interconnects - A Technology not only for Medical Applications
- Gereon Vogtmeier, Christian Drabe, Ralf Dorscheid, Roger Steadman, Dr. Alexander Wolter
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 969 / 2006
- Published online by Cambridge University Press:
- 26 February 2011, 0969-W02-03-V01-03
- Print publication:
- 2006
-
- Article
- Export citation
-
The foremost driver for the development of fully CMOS compatible Through Wafer Interconnects (TWIs) is the need of very large photodiode arrays for detectors, e.g. in computed tomography applications. The front to back-side contact allows the four-side buttable chip placement of the already large chips (20mm × 22mm2). The TWI technology allows an interconnection for chips up to 280μm thickness. This technique does not require any via opening at the font side, thus enabling a metal signal routing on the active side, on top of the interconnection. The application specific optical sensitive front-side of the chip is fully accessible. The production process is separated into three main steps. The first step is the implementation of the special TWI geometry into the CMOS substrate. Depending on the electrical and geometrical requirements of the circuit, different TWI structures are built with deep trenches (up to 280μm), which are passivated and filled with doped poly-silicon. The technologies used in this process, such as DRIE-etching, oxidation and low pressure CVD, are standard CMOS compatible processes. The use of poly-silicon prevents from achieving very low resistivity interconnections but allows the use of all CMOS process steps for an imager production (no temperature limitation – compared to other TWI process flows). The second step is the standard CMOS processing on the substrate already including the TWIs. The third step is a low temperature back-side process starting with wafer thinning down to 280μm or less to open the implemented TWI structure from the back-side. The thickness may be selected depending on the target application. A modified under ball metallization (UBM) process, which could include also re-routing of signals on the back-side, concludes the process flow until the solder ball placement, or similar bond connections.
The special process flow opens a variety of applications which benefit from the full CMOS compatible processing and the accessible front-side.
Through Wafer Interconnects - A Technology not only for Medical Applications
- Gereon Vogtmeier, Christian Drabe, Ralf Dorscheid, Roger Steadman, Dr. Alexander Wolter
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 969 / 2006
- Published online by Cambridge University Press:
- 26 February 2011, 0969-W02-03-V02-03
- Print publication:
- 2006
-
- Article
- Export citation
-
The foremost driver for the development of fully CMOS compatible Through Wafer Interconnects (TWIs) is the need of very large photodiode arrays for detectors, e.g. in computed tomography applications. The front to back-side contact allows the four-side buttable chip placement of the already large chips (20mm × 22mm2). The TWI technology allows an interconnection for chips up to 280μm thickness. This technique does not require any via opening at the font side, thus enabling a metal signal routing on the active side, on top of the interconnection. The application specific optical sensitive front-side of the chip is fully accessible. The production process is separated into three main steps. The first step is the implementation of the special TWI geometry into the CMOS substrate. Depending on the electrical and geometrical requirements of the circuit, different TWI structures are built with deep trenches (up to 280μm), which are passivated and filled with doped poly-silicon. The technologies used in this process, such as DRIE-etching, oxidation and low pressure CVD, are standard CMOS compatible processes. The use of poly-silicon prevents from achieving very low resistivity interconnections but allows the use of all CMOS process steps for an imager production (no temperature limitation – compared to other TWI process flows). The second step is the standard CMOS processing on the substrate already including the TWIs. The third step is a low temperature back-side process starting with wafer thinning down to 280μm or less to open the implemented TWI structure from the back-side. The thickness may be selected depending on the target application. A modified under ball metallization (UBM) process, which could include also re-routing of signals on the back-side, concludes the process flow until the solder ball placement, or similar bond connections.
The special process flow opens a variety of applications which benefit from the full CMOS compatible processing and the accessible front-side.